標題: Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics
作者: Lee, YJ
Ho, PT
Yang, WL
Chao, TS
Huang, TY
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: orientation;ultra thin;Si(111);Si(100);nitrogen;geometry effects
公開日期: 1-Mar-2006
摘要: In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric oil Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect clue to the two-dimensional strain effect.
URI: http://dx.doi.org/10.1143/JJAP.45.1520
http://hdl.handle.net/11536/12591
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.1520
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 3A
起始頁: 1520
結束頁: 1524
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