標題: Uniform COSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer
作者: Chang, JJ
Hsieh, TE
Liu, CP
Wang, YL
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: oxide mediated epitaxy;cobalt silicide;nucleus;annealing
公開日期: 1-Mar-2006
摘要: The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/ Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 degrees C for 240 s followed by 600 degrees C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 degrees C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 degrees C 240 s followed by 600 degrees C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.07.073
http://hdl.handle.net/11536/12588
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.07.073
期刊: THIN SOLID FILMS
Volume: 498
Issue: 1-2
起始頁: 85
結束頁: 89
Appears in Collections:Conferences Paper


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