標題: Mechanism for Cu void defect on various electroplated film conditions
作者: Feng, HP
Cheng, MY
Wang, YL
Chang, SC
Wang, YY
Wan, CC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: copper plating;copper void;direct current plating;electromigration resistance
公開日期: 1-Mar-2006
摘要: This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.07.062
http://hdl.handle.net/11536/12586
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.07.062
期刊: THIN SOLID FILMS
Volume: 498
Issue: 1-2
起始頁: 56
結束頁: 59
Appears in Collections:Conferences Paper


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