標題: The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
作者: Kao, CC
Lu, TC
Huang, HW
Chu, JT
Peng, YC
Yao, HH
Tsai, JY
Kao, TT
Kuo, HC
Wang, SC
Lin, CF
光電工程學系
Department of Photonics
關鍵字: AlN;distributed Bragg reflector (DBR);GaN;vertical-cavity surface-emitting laser (VCSEL)
公開日期: 1-Mar-2006
摘要: The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
URI: http://dx.doi.org/10.1109/LPT.2006.871814
http://hdl.handle.net/11536/12571
ISSN: 1041-1135
DOI: 10.1109/LPT.2006.871814
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 5-8
起始頁: 877
結束頁: 879
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