標題: GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
作者: Lee, YJ
Hwang, JM
Hsu, TC
Hsieh, MH
Jou, MJ
Lee, BJ
Lu, TC
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: GaN;light-emitting diode (LED);sapphire chemical wet etching
公開日期: 1-Mar-2006
摘要: A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57 degrees against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.
URI: http://dx.doi.org/10.1109/LPT.2006.871136
http://hdl.handle.net/11536/12569
ISSN: 1041-1135
DOI: 10.1109/LPT.2006.871136
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 5-8
起始頁: 724
結束頁: 726
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