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dc.contributor.authorChiu, SYen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorLiu, CPen_US
dc.contributor.authorChang, SCen_US
dc.contributor.authorHwang, GJen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorChen, CFen_US
dc.date.accessioned2014-12-08T15:17:12Z-
dc.date.available2014-12-08T15:17:12Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.07.063en_US
dc.identifier.urihttp://hdl.handle.net/11536/12546-
dc.description.abstractIn this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing. (c) 2005 Elsevier B.V All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectchemical mechanical polishingen_US
dc.subjectmicro-scratchen_US
dc.subjecttantalumen_US
dc.subjectcopperen_US
dc.titleHigh-selectivity damascene chemical mechanical polishingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2005.07.063en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume498en_US
dc.citation.issue1-2en_US
dc.citation.spage60en_US
dc.citation.epage63en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000235270500012-
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