標題: High-selectivity damascene chemical mechanical polishing
作者: Chiu, SY
Wang, YL
Liu, CP
Chang, SC
Hwang, GJ
Feng, MS
Chen, CF
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: chemical mechanical polishing;micro-scratch;tantalum;copper
公開日期: 1-Mar-2006
摘要: In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing. (c) 2005 Elsevier B.V All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.07.063
http://hdl.handle.net/11536/12546
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.07.063
期刊: THIN SOLID FILMS
Volume: 498
Issue: 1-2
起始頁: 60
結束頁: 63
Appears in Collections:Conferences Paper


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