標題: Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method
作者: Cheng, HC
Chen, CF
Lee, CC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: chemical bath method;zinc oxide;thin-film transistors;active channel layers
公開日期: 1-Mar-2006
摘要: Thin-film transistors (TFTs) with active channel layers of zinc oxide (ZnO) using a low-temperature chemical bath deposition have been studied. The ZnO films were fabricated on the defined-areas of bottom-gate type TFTs plate by immersing in a chemical bath containing zinc nitrate (Zn(NO3)(2).6H(2)O) and dimethylarnmeborane (DMAB) aqueous solution at 60 degrees C. Silicon oxide (SiO2) was used as the gate insulator. Produced TFTs plate was dried in the air at 100 degrees C, specially, without any further annealing. Current-voltage (I-V) properties measured through the gate infer that the ZnO channel is n-type. Devices were achieved that I-on/I-off ratio was more than 10(5), for which the channel mobility on the order of 0.248 cm(2) V-1 s(-1) has been determined. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.07.101
http://hdl.handle.net/11536/12537
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.07.101
期刊: THIN SOLID FILMS
Volume: 498
Issue: 1-2
起始頁: 142
結束頁: 145
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000235270500028.pdf