標題: A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects
作者: Guo, JC
Tan, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: broadband;inductor;lossy substrate;scalable
公開日期: 1-Mar-2006
摘要: A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L (omega), Re (Z(in), (omega)), and Q (omega) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.
URI: http://dx.doi.org/10.1109/TED.2005.864409
http://hdl.handle.net/11536/12530
ISSN: 0018-9383
DOI: 10.1109/TED.2005.864409
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 3
起始頁: 413
結束頁: 421
Appears in Collections:Articles


Files in This Item:

  1. 000235585700002.pdf