標題: Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current
作者: Zakharova, A
Lapushkin, I
Nilsson, K
Yen, ST
Chao, KA
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Mar-2006
摘要: We have investigated the spin polarization of electrons and holes in InAs/GaSb broken-gap quantum wells under nonequilibrium conditions when a dc electric field is applied parallel to interfaces. The existence of a nonzero asymmetric part of the quasiparticle distribution function caused by the dc current and the spin-split of the electron-hole hybridized states generates a finite spin polarization in both the InAs layer and the GaSb layer. With a very weak asymmetry of the distribution function, our self-consistent calculation yields about 1% spin polarization for electrons in the InAs layer and holes in the GaSb layer. The signs of these spin polarizations depend on the widths of the layers, changing the widths drives a phase transition in the electron-hole gas between the hybridized semiconducting phase and the normal semiconducting phase. In the hybridized semiconducting phase, the spin polarizations in both the InAs layer and the GaSb layer have the same sign. Crossing the phase boundary, the electron spin polarization and the total spin polarization in the InAs/GaSb quantum well can change their signs.
URI: http://dx.doi.org/10.1103/PhysRevB.73.125337
http://hdl.handle.net/11536/12518
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.73.125337
期刊: PHYSICAL REVIEW B
Volume: 73
Issue: 12
起始頁: 0
結束頁: 0
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