Title: Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
Authors: Chen, Min-Chen
Chang, Ting-Chang
Chiu, Yi-Chieh
Chen, Shih-Cheng
Huang, Sheng-Yao
Syu, Yong-En
Chang, Kuan-Chang
Huang, Hui-Chun
Tsai, Tsung-Ming
Gan, Der-Shin
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2013
Abstract: The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.
URI: http://dx.doi.org/10.1149/05329.0001ecst
ISBN: 978-1-60768-481-7; 978-1-62332-126-0
ISSN: 1938-5862
DOI: 10.1149/05329.0001ecst
Volume: 53
Issue: 29
Appears in Collections:Conferences Paper