Title: Characterization of Al2O3/ZnO Grown on Si Substrate by Plasma Enhanced Atomic Layer Deposition
Authors: Chung, Chen-Chen
Tran, Binh-Tinh
Lin, Kung-Liang
Wang, Ching-Chiun
Chen, Chien-Chih
Huang, Chih-Yung
Lee, Sheng-Lang
Chang, Edward-Yi
Department of Materials Science and Engineering
Issue Date: 1-Jan-2013
Abstract: Characterization of nanolaminate Al2O3/ZnO oxide films grown on Si substrates was conducted by using plasma enhanced atomic layer deposition (PE-ALD) method. PE-ALD can minimize the structural imperfections in films and reduce substrate damage. The film deposition by using PE-ALD are dense, defect-free, highly uniform, conformal films and show excellent step coverage. Moreover, compared to other deposition techniques, it is possible to deposit high quality films at much lower temperatures. High resolution transmission electron microscope (TEM) images showed the existence of sharp interfacial layers among the Al2O3, ZnO layer, and the Si substrate for the growth rate of 1.56 angstrom/cycle, and the surface roughness of about 0.2 nm. The nanolaminate-stacking layer can be used in organic light emitting diode encapsulation application as the gas barrier.
URI: http://dx.doi.org/10.1149/05048.0005ecst
ISBN: 978-1-60768-436-7
ISSN: 1938-5862
DOI: 10.1149/05048.0005ecst
Volume: 50
Issue: 48
Appears in Collections:Conferences Paper