Title: Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD
Authors: Lumbantoruan, Franky
Wong, Yuan-Yee
Wu, Yue-Han
Huang, Wei-Ching
Shrestra, Niraj Man
Luong, Tung Tien
Tran Binh Tinh
Chang, Edward Yi
Department of Materials Science and Engineering
Keywords: GaN on Si(111);AlN buffer layer;TMAl preflow;MOCVD
Issue Date: 1-Jan-2014
Abstract: The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved.
URI: http://hdl.handle.net/11536/125100
ISBN: 978-1-4799-5760-6
Begin Page: 20
End Page: 23
Appears in Collections:Conferences Paper