Title: Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities
Authors: Kao, Tsung Sheng
Wu, Tzeng-Tsong
Tsao, Che-Wei
Lin, Jyun-Hao
Lin, Da-Wei
Huang, Shyh-Jer
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Su, Yan-Kuin
Department of Photonics
Keywords: GaN;nonpolar;a-plane;photonic crystal;defect cavity
Issue Date: 1-Jan-2015
Abstract: In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence (mu-PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavities show high quality factor (Q) values in the light emission performance which can be up to 4.3x10(3). Moreover, the degree of polarization (DOP) of the light emission from the nonpolar GaN-based PC defect cavities was measured to achieve around 64 % along the m crystalline direction.
URI: http://dx.doi.org/10.1117/12.2078577
ISBN: 978-1-62841-462-2
ISSN: 0277-786X
DOI: 10.1117/12.2078577
Journal: High Contrast Metastructures IV
Volume: 9372
Appears in Collections:Conferences Paper