標題: Study of efficiency droop in InGaN/GaN light emitting diodes with V-shape pits
作者: Chang, Chiao-Yun
Li, Heng
Lu, Tien-Chang
光電工程學系
Department of Photonics
關鍵字: V-pit defect;internal quantum efficiency (IQE);droop efficency
公開日期: 1-一月-2015
摘要: We invesstagated the relationship between the emission efficiency of InGaN/GaN multiple quantum wells (MQWs) and the V-shape pits (V-pits) forming along the threading dislocation (TD). The thinner InGaN/GaN MQWs on the side walls around V-pits would create higher local energy barriers, which can resist the carriers trapped into the non-radiative recombination centres within TDs. By inserting different InGaN/GaN superlattice (SLS) layers below the MQWs, sizes of V-pits could be properly controlled. It was found that the V-pit size on InGaN MQWs increased with increasing SLS layers, which could decrease energy barriers. On the contrary, the shorter distance between the TD center and V-pit boundary would increase the carrier capturing capability of TDs in smaller V-pits. By properly controlling the V-shape defect formation, the best internal quantum efficiency of about 70% f was found in the MQWs with underlying 15 periods SLS layers.
URI: http://dx.doi.org/10.1117/12.2078122
http://hdl.handle.net/11536/125091
ISBN: 978-1-62841-453-0
ISSN: 0277-786X
DOI: 10.1117/12.2078122
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES X
Volume: 9363
顯示於類別:會議論文