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dc.contributor.authorTai, YHen_US
dc.contributor.authorSu, FCen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:02:35Z-
dc.date.available2014-12-08T15:02:35Z-
dc.date.issued1996-06-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(95)00271-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/1249-
dc.description.abstractThe electrical characteristics of the thin film transistors (TFT's) with hydrogenated amorphous silicon (a-Si:H) films thinner than 0.1 mu m have been carefully studied to show that the interface states and fixed charges at the rear interface will play the comparable effects to those at the front interface on the field effect conductance. It is dearly demonstrated that as the thickness of the active layer is smaller than the theoretically expected width of the space charge region, the potential at the rear interface will be affected by the gate voltage. This is very different from the conventional case with a thicker active layer. Since the TFT's at present have smaller typical thicknesses of the semiconductor films than the expected width of the space charge region, the effects of the interface states and the fixed charges at both the rear and front interfaces, as well as the bulk states of the thin a-Si:H films, must be taken into account concurrently.en_US
dc.language.isoen_USen_US
dc.titleEffects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0038-1101(95)00271-5en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume39en_US
dc.citation.issue6en_US
dc.citation.spage901en_US
dc.citation.epage908en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UN32400020-
dc.citation.woscount1-
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