Title: New Accurate Method to Analyze both Floating Gate Charge and Tunnel Oxide Trapped Charge Profile in NAND Flash Memory
Authors: Shirota, R.
Yang, B-J.
Chiu, Y-Y
Chen, H-T.
Ng, S-F.
Wang, P-Y.
Chang, J-H.
Kurachi, I.
Department of Electronics Engineering and Institute of Electronics
Keywords: Flash memory;reliability;endurance;trap
Issue Date: 1-Jan-2014
Abstract: New method to extract the amount of floating (FG) charge (Q(FG)) apart from oxide trapped charge (Q(OX)) generated by program and erase (P/E) cycles is proposed, for the first time. Q(FG) shift by P/E cycling shows asymmetry between programmed and erased states as follows; vertical bar Q(FG)vertical bar exhibits the peak at similar to 100 cycles in programmed state, while vertical bar Q(FG)vertical bar monotonically reduces in erased state. Next, the midgap voltage (V-mid) shift of the cell caused by the generation of Q(OX) is also extracted by this method. Therefore, it enables to analyze the profiles of the hole and electron-trap separately across the oxide in detail. It is demonstrated that the hole-trap is mainly distributed near to Si surface and the centroid of electron-trap is located near to the middle of oxide. In addition, it is found that hole-trap near to Si has strong dependence on erase bias.
URI: http://hdl.handle.net/11536/124928
ISBN: 978-1-4799-3596-3
ISSN: 2330-7978
Appears in Collections:Conferences Paper