|標題:||Chemical vapour deposition growth of graphene layers on metal substrates|
Rafailov, P. M.
Lin, S. H.
Chi, G. C.
Gospodinov, M. M.
Department of Photonics
|摘要:||Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO2/Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasi-closed volume. Optimal growth conditions and the nature of defects in the layers are discussed.|
|期刊:||18TH INTERNATIONAL SCHOOL ON CONDENSED MATTER PHYSICS: CHALLENGES OF NANOSCALE SCIENCE: THEORY, MATERIALS, APPLICATIONS|