標題: Chemical vapour deposition growth of graphene layers on metal substrates
作者: Lai, Y-C
Yu, S-C
Rafailov, P. M.
Vlaikova, E.
Valkov, S.
Petrov, S.
Koprinarova, J.
Terziyska, P.
Marinova, V.
Lin, S. H.
Yu, P.
Chi, G. C.
Dimitrov, D.
Gospodinov, M. M.
光電工程學系
Department of Photonics
公開日期: 1-一月-2014
摘要: Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO2/Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasi-closed volume. Optimal growth conditions and the nature of defects in the layers are discussed.
URI: http://dx.doi.org/10.1088/1742-6596/558/1/012059
http://hdl.handle.net/11536/124890
ISSN: 1742-6588
DOI: 10.1088/1742-6596/558/1/012059
期刊: 18TH INTERNATIONAL SCHOOL ON CONDENSED MATTER PHYSICS: CHALLENGES OF NANOSCALE SCIENCE: THEORY, MATERIALS, APPLICATIONS
Volume: 558
顯示於類別:會議論文


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