標題: Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers
作者: Hao, OY
Wu, YCS
Chiou, HH
Liu, CC
Cheng, JH
Wen, OY
Chiou, SH
Shiue, ST
Chueh, YL
Chou, LJ
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 13-Mar-2006
摘要: Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 degrees C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 degrees C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 degrees C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2185611
http://hdl.handle.net/11536/12489
ISSN: 0003-6951
DOI: 10.1063/1.2185611
期刊: APPLIED PHYSICS LETTERS
Volume: 88
Issue: 11
結束頁: 
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