Title: 2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-Treatments
Authors: Luong, Tien-Tung
Binh Tinh Tran
Ho, Yen-Teng
Wei, Ting-Wei
Wu, Yue-Han
Yen, Tzu-Chun
Wei, Lin-Lung
Maa, Jer-Shen
Chang, Edward Yi
Department of Materials Science and Engineering
College of Photonics
Department of Electronics Engineering and Institute of Electronics
Keywords: AlN buffer;hydrogen pre-treatment;carbonization;XRD phi-scan;2H-SiC
Issue Date: 1-May-2015
Abstract: The effects of surface pre-treatments and the role of an AN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60 degrees. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2H-SiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN.
URI: http://dx.doi.org/10.1007/s13391-015-4208-9
ISSN: 1738-8090
DOI: 10.1007/s13391-015-4208-9
Volume: 11
Begin Page: 352
End Page: 359
Appears in Collections:Articles