Title: Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
Authors: Chand, Umesh
Huang, Kuan-Chang
Huang, Chun-Yang
Ho, Chia-Hua
Lin, Chen-Hsi
Tseng, Tseung-Yuen
Department of Electronics Engineering and Institute of Electronics
Issue Date: 14-May-2015
Abstract: The effect of the annealing treatment of a HfO2 resistive switching layer and the memory performance of a HfO2-based resistive random access memory (cross-bar structure) device were investigated. Oxygen is released from HfO2 resistive switching layers during vacuum annealing, leading to unstable resistive switching properties. This oxygen release problem can be suppressed by inserting an Al2O3 thin film, which has a lower Gibbs free energy, between the HfO2 layer and top electrode to form a Ti/Al2O3/HfO2/TiN structure. This device structure exhibited good reliability after high temperature vacuum annealing and post metal annealing (PMA) treatments. Moreover, the endurance and retention properties of the device were also improved after the PMA treatment. (c) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4921182
ISSN: 0021-8979
DOI: 10.1063/1.4921182
Volume: 117
Issue: 18
Appears in Collections:Articles