Title: Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection
Authors: Kuo, Ming-Hao
Lai, Wei-Ting
Lee, Sheng-Wei
Chen, Yen-Chun
Chang, Chia-Wei
Chang, Wen-Hao
Hsu, Tzu-Min
Li, Pei-Wen
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Issue Date: 15-May-2015
Abstract: We demonstrate an effective approach to grow high-quality thin film (>1 mu m) ofmultifold Ge/Si/Ge composite quantum dots ( CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/mu m(2), superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors. (C) 2015 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.40.002401
ISSN: 0146-9592
DOI: 10.1364/OL.40.002401
Volume: 40
Issue: 10
Begin Page: 2401
End Page: 2404
Appears in Collections:Articles