標題: InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
作者: Yao, HH
Lu, TC
Huang, GS
Chen, CY
Liang, WD
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
公開日期: 28-三月-2006
摘要: Self-assembled InGaN quantum dots (QDs) were grown by metal-organic chemical vapour deposition with growth interruption at low V/III ratio and low growth temperature on sapphire substrates. The effects of the interruption time on the morphological and optical properties of InGaN QDs were studied. The results show that the growth interruption can modify the dimension and distribution of InGaN QDs, and cause the QD emission wavelength to blue shift with increasing interruption time. A density of InGaN QDs of about 4.5 x 10(10) cm(-2) with an average lateral size of 11.5 nm and an average height of 1.6 nm can be obtained by using a growth interruption time of 60 s.
URI: http://dx.doi.org/10.1088/0957-4484/17/6/028
http://hdl.handle.net/11536/12472
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/6/028
期刊: NANOTECHNOLOGY
Volume: 17
Issue: 6
起始頁: 1713
結束頁: 1716
顯示於類別:期刊論文


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  1. 000236711900028.pdf