Title: Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
Authors: Wu, YewChung Sermon
Isabel, A. Panimaya Selvi
Zheng, Jian-Hsuan
Lin, Bo-Wen
Li, Jhen-Hong
Lin, Chia-Chen
Department of Materials Science and Engineering
Issue Date: 1-Apr-2015
Abstract: The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 mu m (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.
URI: http://dx.doi.org/10.3390/ma8041993
ISSN: 1996-1944
DOI: 10.3390/ma8041993
Begin Page: 1993
End Page: 1999
Appears in Collections:Articles