Title: Vertical organic transistors withstanding high voltage bias
Authors: Chang, Po-Yi
Peng, Shao-Fu
Chao, Yu-Chiang
Lin, Hung-Cheng
Zan, Hsiao-Wen
Meng, Hsin-Fei
Institute of Physics
Department of Photonics
Issue Date: 13-Apr-2015
Abstract: Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15V was obtained. An on/off current ratio of 10(3)-10(4) and an output current density of 5-10 mA/cm(2) were achieved. (c) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4917562
ISSN: 0003-6951
DOI: 10.1063/1.4917562
Volume: 106
Issue: 15
Appears in Collections:Articles