標題: Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
作者: Chiang, Yen Chih
Lin, Chien Chung
Kuo, Hao Chung
光電系統研究所
照明與能源光電研究所
光電工程學系
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Photonics
關鍵字: Gallium nitride;Light-emitting diode;Vertical injection;Ultraviolet;Textured surface
公開日期: 15-四月-2015
摘要: In this study, novel thin-GaN-based ultraviolet light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection techniques. Placing PN electrodes on the same side minimized the absorption caused by electrodes in conventional vertical injection light-emitting diodes (V-LEDs) and the current spreading was improved. The light output power (700 mA) of the NTG-LEDs was enhanced by 18.3% compared with that of the V-LEDs, and the external quantum efficiency (EQE) of the NTG-LEDs was also relatively enhanced by 20.0% compared with that of a reference device. When the current operations were 1,500 mA, the enhancements of the light output power and EQE were 27.4% and 27.2%, respectively. Additionally, the efficiency droop was improved by more than 15% at the same current level.
URI: http://dx.doi.org/10.1186/s11671-015-0885-4
http://hdl.handle.net/11536/124675
ISSN: 1556-276X
DOI: 10.1186/s11671-015-0885-4
期刊: NANOSCALE RESEARCH LETTERS
Volume: 10
顯示於類別:期刊論文