Title: Fabrication and electrical characterization of nanoscaled-Schottky diodes based on metal silicide/silicon nanowires with scanning probe lithography and wet etching
Authors: Sheu, JT
Yeh, SP
Lien, CH
Tsai, ST
材料科學與工程學系奈米科技碩博班
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Keywords: silicon nanowire (SiNW);nanometer-sized Schottky diode;nickel monosilicide;scanning probe lithography;TMAH;RTA
Issue Date: 1-Apr-2006
Abstract: Nanometer-sized Schottky diodes based on nickel monosilicide (NiSi)/silicon nanowire (SiNW) heterojunction have been fabricated and studied for their electrical transport characteristics. The SiNW was fabricated by scanning probe lithography (SPL) and tetramethylammonium (TMAH) wet etching. The diameter and height of the SiNWs were 60 and 25 nm, respectively. A Schottky barrier diode was obtained by patterning nickel film onto half of the SiNW by conventional lithography, and then forming nickel monosilicide by the solid state reaction between nickel and silicon under rapid thermal annealing (RTA) in N-2 ambient for 1 min. The current-voltage characteristics measured exhibited clear rectifying behavior consistent with a 0.22 eV schottky barrier height, and no reverse bias breakdown was observed up to a voltage of -5 V.
URI: http://dx.doi.org/10.1143/JJAP.45.3686
http://hdl.handle.net/11536/12463
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.3686
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 4B
Begin Page: 3686
End Page: 3689
Appears in Collections:Conferences Paper


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