標題: Slanted n-ZnO nanorod arrays/p-GaN light-emitting diodes with strong ultraviolet emissions
作者: Yang, Zu-Po
Xie, Zhong-Han
Lin, Chia-Ching
Lee, Ya-Ju
光電系統研究所
Institute of Photonic System
公開日期: 1-Feb-2015
摘要: Both of oblique angle deposition and conventional deposition techniques were used by a RF sputtering system to grow the slanted (beta = 32 degrees) and planar (beta = 0 degrees) n-ZnO films on p-GaN, respectively. These two kinds of n-ZnO/p-GaN heterojunctions were then fabricated the light-emitting diodes (LEDs). The electrical and optical properties of these two kinds of LEDs were investigated systematically. The results show that the slanted n-ZnO/p-GaN LEDs have a lower turn-on voltage and less leakage current than that of planar n-ZnO/p-GaN LEDs. Moreover, different from the planar n-ZnO/p-GaN LEDs which emitting colors changes with injection current, the slanted n-ZnO/p-GaN LEDs retains UV emissions (385-400 nm) under the entire range of injection currents we applied. The dominant UV luminescence of slanted n-ZnO/p-GaN LEDs is attributed to the ZnO near band edge transitions, indicating the high quality of slanted ZnO films and exhibiting the essential property dedicated to nano-sized heterojunctions. Hence, we have demonstrated that the slanted n-ZnO/p-GaN LEDs fabricated by oblique angle deposition have better performance than the planar n-ZnO/p-GaN LEDs fabricated by convention deposition means. (C) 2015 Optical Society of America
URI: http://dx.doi.org/10.1364/OME.5.000399
http://hdl.handle.net/11536/124576
ISSN: 2159-3930
DOI: 10.1364/OME.5.000399
期刊: OPTICAL MATERIALS EXPRESS
Volume: 5
Issue: 2
起始頁: 399
結束頁: 407
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