Title: Layered MoS2 grown on c-sapphire by pulsed laser deposition
Authors: Ho, Yen-Teng
Ma, Chun-Hao
Luong, Tien-Tung
Wei, Lin-Lung
Yen, Tzu-Chun
Hsu, Wei-Ting
Chang, Wen-Hao
Chu, Yung-Ching
Tu, Yung-Yi
Pande, Krishna Prasad
Chang, Edward Yi
Department of Materials Science and Engineering
Department of Electrophysics
Undergraduate Honors Program of Electrical Engineering and Computer Science
Department of Electronics Engineering and Institute of Electronics
Keywords: transition-metal dichalcogenides;two-dimensional layers;MoS2;pulsed laser deposition;sulfurization;sapphire substrates
Issue Date: 1-Mar-2015
Abstract: Layered growth of molybdenum disulphide (MoS2) was successfully achieved by pulsed laser deposition (PLD) method on c-plane sapphire substrate. Growth of monolayer to a few monolayer MoS2, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A1gE12g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm(1), suggesting a monolayer MoS2 was obtained. Two-dimensional (2D) layer growth of MoS2 is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002) MoS2 and inline image sapphire//inline imageMoS(2) is determined. The results imply that PLD is suitable for layered MoS2 growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS2, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim
URI: http://dx.doi.org/10.1002/pssr.201409561
ISSN: 1862-6254
DOI: 10.1002/pssr.201409561
Begin Page: 187
End Page: 191
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