標題: GaN Micromechanical Resonators with Meshed Metal Bottom Electrode
作者: Ansari, Azadeh
Liu, Che-Yu
Lin, Chien-Chung
Kuo, Hao-Chung
Ku, Pei-Cheng
Rais-Zadeh, Mina
光電工程學系
Department of Photonics
公開日期: 1-三月-2015
摘要: This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO2) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient (d(33)) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF2) etch and therefore eliminating the need for backside lithography and etching.
URI: http://dx.doi.org/10.3390/ma8031204
http://hdl.handle.net/11536/124538
ISSN: 1996-1944
DOI: 10.3390/ma8031204
期刊: MATERIALS
起始頁: 1204
結束頁: 1212
顯示於類別:期刊論文