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dc.contributor.authorCheng, Shun-Jenen_US
dc.contributor.authorLiao, Yu-Huaien_US
dc.contributor.authorLin, Pei-Yien_US
dc.date.accessioned2019-04-03T06:37:14Z-
dc.date.available2019-04-03T06:37:14Z-
dc.date.issued2015-03-20en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.91.115310en_US
dc.identifier.urihttp://hdl.handle.net/11536/124500-
dc.description.abstractWe present numerical investigations based on the Luttinger-Kohn four-band k . p theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress control. In the formalisms, stressing a photoexcited quantum dot is equivalent creating a pseudomagnetic field that is directly coupled to the pseudospin of the exciton doublet and tunable to tailor the polarized fine structure of exciton. The latter feature is associated with the valence-band mixing of exciton, which is especially sensitive to external stress in inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dots and allows us to mechanically design and prepare any desired exciton states of QD photon sources prior to the photon generation.en_US
dc.language.isoen_USen_US
dc.titleMechanically encoded single-photon sources: Stress-controlled excitonic fine structures of droplet epitaxial quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.91.115310en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume91en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000352077200002en_US
dc.citation.woscount4en_US
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