標題: A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming
作者: Tsai, WJ
Zous, NK
Wang, TH
Ku, YHJ
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: band-to-band-tunneling (BTBT)-induced hothole (HH) injection;channel-hot electron (CHE) injection;flash electrically erasable programmable read-only memory (EEP-ROM);multilevel programming;multiplex virtual ground AND (MXVAND);NBit;nitride read-only memory (NROM);overerasure;programming by hot-hole injection nitride electron storage;(PHINES);self-convergent;silicon-oxide-nitride-oxide-silicon (SONOS);soft program;trapped charge storage;trapping nitride
公開日期: 1-Apr-2006
摘要: By using the charge pumping technique, it was found that the injected-hole occupied percentage increases with respect to the whole channel, and overerasure thus happens in a scaled trapping-nitride storage Flash memory cell. Such overerasure can be avoided or can be recovered if the cell is suitably biased during the erase operation. Moreover, the erase threshold voltage can be well controlled by the applied erase gate voltage. The reason is that both the channel-hot electrons and the band-to-band tunneling-induced hot holes would inject at the same time and are in balance as a specific surface potential is achieved. Based on this study, a self-limited soft program, as well as a self-saturated erase scheme, is proposed. Applications of this concept to multilevel programming are also demonstrated.
URI: http://dx.doi.org/10.1109/TED.2006.871198
http://hdl.handle.net/11536/12450
ISSN: 0018-9383
DOI: 10.1109/TED.2006.871198
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 4
起始頁: 808
結束頁: 814
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