|Title:||The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO|
|Authors:||Wang, H. H.|
Tian, J. S.
Chen, C. Y.
Huang, H. H.
Yeh, Y. C.
Deng, P. Y.
Chu, Y. H.
Wu, Y. R.
He, J. H.
Department of Materials Science and Engineering
|Keywords:||Optical films;photoluminescence;optical polarization;strain;II-VI semiconductor materials|
|Abstract:||The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (rho = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the  polarized state is upper shifted and is overlapping with the [11 (2) over bar0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.|
|Journal:||IEEE PHOTONICS JOURNAL|
|Appears in Collections:||Articles|