標題: Growth and characterization of Cu(In,Ga)Se-2 thin films by nanosecond and femtosecond pulsed laser deposition
作者: Chen, Shih-Chen
Hsieh, Dan-Hua
Jiang, Hsin
Liao, Yu-Kuang
Lai, Fang-I
Chen, Chyong-Hua
Luo, Chih Wei
Juang, Jenh-Yih
Chueh, Yu-Lun
Wu, Kaung-Hsiung
Kuo, Hao-Chung
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: CIGS;Pulsed laser deposition;Femtosecond;Photoluminescence;Pump probe
公開日期: 2-六月-2014
摘要: In this work, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu-2 (-) Se-x, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
URI: http://dx.doi.org/10.1186/1556-276X-9-280
http://hdl.handle.net/11536/124419
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-280
期刊: NANOSCALE RESEARCH LETTERS
顯示於類別:期刊論文


文件中的檔案:

  1. 000350730400001.pdf