Title: Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate
Authors: Chang, Chia-Hao
Li, Zong-Lin
Lu, Hong-Ting
Pan, Chien-Hung
Lee, Chien-Ping
Lin, Gray
Lin, Sheng-Di
Department of Electronics Engineering and Institute of Electronics
Keywords: InP-based;short-wavelength infrared;'W'-type quantum wells;InAlGaAs separate confined layer
Issue Date: 1-Feb-2015
Abstract: The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.
URI: http://dx.doi.org/10.1109/LPT.2014.2362151
ISSN: 1041-1135
DOI: 10.1109/LPT.2014.2362151
Volume: 27
Begin Page: 225
End Page: 228
Appears in Collections:Articles