Title: Stress reduction of (111) homoepitaxial diamond films on nickel-coated substrate
Authors: Chiu, Kun-An
Tian, Jr-Sheng
Wu, Yue-Han
Peng, Chun-Yen
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: Homoepitaxial growth;Diamond;Nickel;CVD
Issue Date: 25-Nov-2014
Abstract: Crack-free (111) homoepitaxial diamond films were grown on Ni-coated diamond substrates by microwave plasma chemical vapor deposition. After diamond deposition, the Ni islands with a size of 50-1000 nm were formed and embedded underneath the diamond films. The tensile stress in the diamond films evaluated with micro-Raman spectroscopy can be significantly reduced with the embedded Ni islands, which allows the growth of similar to 5 mu m thick crack-free (111) homoepitaxial diamond films with a good quality, compared with those directly deposited on substrates without coating. (c) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2014.03.012
http://hdl.handle.net/11536/124277
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2014.03.012
Journal: SURFACE & COATINGS TECHNOLOGY
Volume: 259
Begin Page: 358
End Page: 362
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