標題: Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC
作者: Tu, CH
Chang, TC
Liu, PT
Yang, CY
Liu, HC
Chen, WR
Wu, YC
Chang, CY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: fluorine ion implantation;polycrystalline silicon thin-film transistors (poly-Si TFTs)
公開日期: 1-四月-2006
摘要: The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.
URI: http://dx.doi.org/10.1109/LED.2006.870420
http://hdl.handle.net/11536/12427
ISSN: 0741-3106
DOI: 10.1109/LED.2006.870420
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 4
起始頁: 262
結束頁: 264
顯示於類別:期刊論文