標題: Improved reliability of HfO2/SiON gate stack by fluorine incorporation
作者: Lu, WT
Chiein, CH
Lan, WT
Lee, TC
Lehnen, P
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bias temperature instability (BTI);fluorine (F);hafnium oxide;plasma charging damage
公開日期: 1-Apr-2006
摘要: Effects of fluorine (F) incorporation on the reliabilities of pMOSFETs with HfO2/SiON gate stacks have been studied. In this letter, fluorine was incorporated during the source/drain implant step and was diffused into the gate stacks during subsequent dopant activation. The authors found that F introduction only negligibly affects the fundamental electrical properties of the transistors, such as threshold voltage V-th, subthreshold swing, gate leakage current, and equivalent oxide thickness. In contrast, reduced generation rates in interface states and charge trapping under constant voltage stress and bias temperature stress were observed for the fluorine-incorporated split. Moreover, the authors demonstrated for the first time that F incorporation could strengthen the immunity against plasma charging damage.
URI: http://dx.doi.org/10.1109/LED.2006.871539
http://hdl.handle.net/11536/12426
ISSN: 0741-3106
DOI: 10.1109/LED.2006.871539
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 4
起始頁: 240
結束頁: 242
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