標題: Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
作者: Yu, Ing-Song
Chang, Chun-Pu
Yang, Chung-Pei
Lin, Chun-Ting
Ma, Yuan-Ron
Chen, Chun-Chi
光電系統研究所
Institute of Photonic System
關鍵字: Molecular beam epitaxy;Gallium nitride;Quantum dots;Scanning photoemission microscopy;Reflection high-energy electron diffraction;Droplet epitaxy;Reflection high-energy electron diffraction;X-ray photoelectron spectroscopy
公開日期: 17-十二月-2014
摘要: In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 x 10(10) to 1.1 x 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600 degrees C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and mu-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.
URI: http://dx.doi.org/10.1186/1556-276X-9-682
http://hdl.handle.net/11536/124257
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-682
期刊: NANOSCALE RESEARCH LETTERS
顯示於類別:期刊論文


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