標題: MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors
作者: Lee, WN
Chen, YF
Huang, JH
Guo, XJ
Kuo, CT
Ku, HC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: MBE;(In;Al;Mn) As;diluted ferrornagnetic semiconductor
公開日期: 1-四月-2006
摘要: A series of quaternary-diluted magnetic semiconductors, (In1-y,Al-y)(1-x)MnxAs, have been successfully grown on InP substrates by low-temperature molecular beam epitaxy. The (ln(0.52)Al(0.48))(1-x)MnxAs with x <= 0.11 were grown on a nearly lattice-matched In0.52Al0.48As buffer, while the (In1-y,Al-y)(1-x)MnxAs with a higher Mn content of 0.11 < x <= 0.18 were grown on a graded 3-layer In,-,,Al-y 'As buffer structure. The results of transmission electron microscopy and double-crystal X-ray diffraction reveal that all (In1-yAly)(1-x),Mn,As epilayers are single crystal with zincblende structure, and the lattice constant increases with increasing the Mn content. The magnetic measurements show that the (In1-y,Al-y)(1-x)MnxAs semiconductors exhibit a paramagnetic-like state for x <= 0.05 while a ferromagnetic state for x >= 0.05, and the Curie temperature of ferromagnetic (In1-yAly)(1-x) MnxAs increases with increasing Mn content. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2005.12.085
http://hdl.handle.net/11536/12424
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.12.085
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 289
Issue: 2
起始頁: 502
結束頁: 505
顯示於類別:期刊論文


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