Title: The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive Memories
Authors: Zheng, Z. W.
Hsu, H. H.
Chen, P. C.
Cheng, C. H.
Department of Electronics Engineering and Institute of Electronics
Keywords: Resistive Random Access Memory (RRAM);Filament;TiOx;Work Function
Issue Date: 1-Jun-2015
Abstract: Using oxygen vacancy rich (VO-rich) TiOx dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the NiNO-rich TiOx/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiOx after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.
URI: http://dx.doi.org/10.1166/jnn.2015.9763
ISSN: 1533-4880
DOI: 10.1166/jnn.2015.9763
Volume: 15
Begin Page: 4431
End Page: 4434
Appears in Collections:Articles