標題: Toward high efficiency and panel size 30 x 40 cm(2) Cu(I,Ga)Se-2 solar cell: Investigation of modified stacking sequences of metallic precursors and pre-annealing process without Se vapor at low temperature
作者: Wu, Tsung-Ta
Huang, Jyun-Hong
Hu, Fan
Chang, Chia-ho
Liu, Wen-Long
Wang, Tsang-Hsiu
Shen, Chang-Hong
Shieh, Jia-Min
Chueh, Yu-Lun
光電學院
影像與生醫光電研究所
College of Photonics
Institute of Imaging and Biomedical Photonics
關鍵字: Cu(InGa)Se-2;Stacked precursor;Pre-annealing;Setenization;Ga depth profile
公開日期: 1-十一月-2014
摘要: Modified stacking sequence of precursors and pre-annealing process on Se vapor at low temperature were applied to Cu(ln,Ga)Se-2 (CIGS) solar. The remarkable improvement of efficiency (5.53-10.10% and further 11.04%) and open circuit voltage (0.41 V-0.53 V and further 0.56 V) comes from a compact, smooth microstructure, and modified depth profile of Ga with suitable thickness of CuGa multi-stacking layers in the top of precursors as well as surface bandgap enhancement via pre-nnealing process without Se vapor followed by a specific non-toxic hydrogen-assisted solid Se vapor selenization process. The effects of microstructural, compositional and electrical characteristics of Ga distribution including accumulation and interdiffusion were examined in detail. Finally, a large-area (40 x 30 cm(2)) CIGS solar cell efficiency with improved open circuit voltage (V-OC) and fill factor (FE) of 36% and 14% has been demonstrated, yielding a promising efficiency of similar to 11.04%. (C) 2014 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nanoen.2014.07.018
http://hdl.handle.net/11536/124140
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2014.07.018
期刊: NANO ENERGY
Volume: 10
起始頁: 28
結束頁: 36
顯示於類別:期刊論文


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  1. 000345986500004.pdf