標題: Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate
作者: Hsiao, Yu-Lin
Wang, Yi-Jie
Chang, Chia-Ao
Weng, You-Chen
Chen, Yen-Yu
Chen, Kai-Wei
Maa, Jer-Shen
Chang, Edward Yi
材料科學與工程學系
光電系統研究所
照明與能源光電研究所
Department of Materials Science and Engineering
Institute of Photonic System
Institute of Lighting and Energy Photonics
公開日期: 1-十一月-2014
摘要: A low-temperature (LT) AlGaN interlayer is inserted in the Al0.1Ga0.9N back barrier layer of an Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double heterostructure grown on a 150mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al0.1Ga0.9N back barrier layer, especially for screw dislocation reduction. In addition, a buffer breakdown voltage higher than 600V is achieved, which is much higher than those of conventional heterostructures. These results demonstrate the effectiveness of combining the LT-AlGaN interlayer and the Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double heterostructure on a Si substrate to increase the breakdown voltage for high-power applications. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.7.115501
http://hdl.handle.net/11536/124138
ISSN: 1882-0778
DOI: 10.7567/APEX.7.115501
期刊: APPLIED PHYSICS EXPRESS
Issue: 11
顯示於類別:期刊論文


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