Title: Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application
Authors: Chiang, Che-Yang
Hsu, Heng-Tung
Chang, Edward Y.
Department of Materials Science and Engineering
Issue Date: 1-Nov-2014
Abstract: A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P-idB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.53.110311
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.110311
Volume: 53
Issue: 11
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