Title: High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT
Authors: Adak, Sarosij
Sarkar, Arghyadeep
Swain, Sanjit
Pardeshi, Hemant
Pati, Sudhansu Kumar
Sarkar, Chandan Kumar
Department of Materials Science and Engineering
Keywords: p-GaN back barrier;AlInN/GaN;Gate-Recess;Enhancement-Mode HEMT;Cutoff frequency
Issue Date: 1-Nov-2014
Abstract: In the present work, we propose and perform extensive simulation study of the novel device structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate-Recessed Enhancement-Mode HEMT device for reducing the short channel effects, gate leakage and enhancing the frequency performance. The influence of the p-GaN back barrier layer on the device performance of the newly proposed structure is done using 2D Sentaurus TCAD simulations. The simulations use Drift Diffusion (DD) model, Masetti and Canali model, which are calibrated/validated with the previously published experimental results. Simulation are done to analyze the transfer characteristics, transconductance (g(m)), Gate leakage current (I-g), drain induced barrier lowering (DIBL), subthreshold slope (SS), threshold voltage (Vth), On-current Off-current ratio (I-on/l(off)), gate capacitance (C-gg) and cut off frequency (f(r)) of the proposed device. A comparison is done between the device without back barrier layer and the proposed device with p-GaN back barrier layer. Use of p-GaN back barrier layer helps to achieve a higher positive Vth due to the depletion effect, reduced I-g, reduced DIBL, prevents degradation of SS and helps to increase the f(T). Very impressive f(r) up to 123 GHz, as compared to 70 GHz for the device without back barrier. These results indicate that AlInN/AlN/GaN Gate-Recessed Enhancement-Mode HEMT structure with p-GaN back barrier is a promising candidate for microwave and switching application. (C) 2014 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.spmi.2014.07.036
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2014.07.036
Volume: 75
Begin Page: 347
End Page: 357
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