標題: Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
作者: Lin, Pei-Yin
Chen, Jr-Yu
Shih, Yi-Sen
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Metal-organic chemical vapor deposition;Epitaxy;AlInN;GaN
公開日期: 23-十一月-2014
摘要: The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.
URI: http://dx.doi.org/10.1186/1556-276X-9-628
http://hdl.handle.net/11536/124123
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-628
期刊: NANOSCALE RESEARCH LETTERS
顯示於類別:期刊論文


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