標題: Sub-100 nm ALD-assisted nanoimprint lithography for realizing vertical organic transistors with high ON/OFF ratio and high output current
作者: Hsu, Yung
Fang, Xiang
Wang, Lon A.
Zan, Hsiao-Wen
Meng, Hsin-Fei
Yang, Sheng-Hsiung
光電系統研究所
物理研究所
光電工程學系
Institute of Photonic System
Institute of Physics
Department of Photonics
關鍵字: Nanoimprint;Atomic layer deposition (ALD);Vertical channel;Organic transistor
公開日期: 1-十二月-2014
摘要: We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm(2)/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2014.10.008
http://hdl.handle.net/11536/124119
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2014.10.008
期刊: ORGANIC ELECTRONICS
Volume: 15
Issue: 12
起始頁: 3609
結束頁: 3614
顯示於類別:期刊論文


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  1. 000345649200028.pdf