標題: Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs
作者: Liu, Kuan-Ju
Chang, Ting-Chang
Yang, Ren-Ya
Chen, Ching-En
Ho, Szu-Han
Tsai, Jyun-Yu
Hsieh, Tien-Yu
Cheng, Osbert
Huang, Cheng-Tung
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Floating body effect (FBE);Hot carrier effect (HCE);Silicon-on-insulator (SOI)
公開日期: 1-十二月-2014
摘要: This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-oninsulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2014.08.031
http://hdl.handle.net/11536/124111
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.08.031
期刊: THIN SOLID FILMS
Volume: 572
起始頁: 39
結束頁: 43
顯示於類別:期刊論文


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