標題: Enhanced photocurrent of a nitride-based photodetector with InN dot-like structures
作者: Hsu, Lung-Hsing
Lin, Chien-Chung
Han, Hau-Vei
Lin, Da-Wei
Lo, Yen-Hua
Hwang, Yi-Chia
Kuo, Hao-Chung
光電系統研究所
照明與能源光電研究所
光電工程學系
光電工程研究所
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Photonics
Institute of EO Enginerring
公開日期: 1-Dec-2014
摘要: The InN dot-like layer was applied in the gallium nitride based material for the purpose of infrared photodetectors (PDs). This InN layer was grown by a low-pressure metal organic chemical vapor deposition technology under different growth temperatures. The X-ray diffraction patterns provide the information of crystal structure and the hexagonal orientation was detected. The Raman shifts and photoluminescence were also used to characterize the quality of InN film. Finally, the fabricated Schottky-type photodetector was tested under a solar simulator and a long-wavelength laser (lambda = 1550nm). The measurements show a highly linear relation between photo-generated currents and laser powers for the wavelength of 1550 nm. In the photonic detection range suitable for optical fiber communiation, a quantum efficiency of 9.2% can be observed. (C) 2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OME.4.002565
http://hdl.handle.net/11536/124109
ISSN: 2159-3930
DOI: 10.1364/OME.4.002565
期刊: OPTICAL MATERIALS EXPRESS
Volume: 4
Issue: 12
起始頁: 2565
結束頁: 2573
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