標題: Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering
作者: Shie, Bo-Shiuan
Lin, Horng-Chih
Lyu, Rong-Jye
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Film profile engineering (FPE);InGaZnO (IGZO);metal oxide;thin-film transistors (TFTs)
公開日期: 1-十二月-2014
摘要: In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O-2/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al2O3 as the gate dielectric, decent performance in terms of high ON/OFF current ratio (>10(8)), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm(2)/V.s) is obtained. The influences of O-2/Ar flow ratio are distinct for the devices with Al2O3 gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N-2 ambient.
URI: http://dx.doi.org/10.1109/TPS.2014.2359992
http://hdl.handle.net/11536/124107
ISSN: 0093-3813
DOI: 10.1109/TPS.2014.2359992
期刊: IEEE TRANSACTIONS ON PLASMA SCIENCE
Volume: 42
Issue: 12
起始頁: 3742
結束頁: 3746
顯示於類別:期刊論文


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